
The onsemi DTA114YM3T5G is a compact, high-performance PNP bipolar junction transistor (BJT) designed for low-power and high-reliability electronic applications. It offers a combination of excellent gain, low saturation voltage, and wide operating temperature, making it ideal for surface-mount designs. In this comprehensive article, we'll delve into the intricacies of the DTA114YM3T5G, uncovering its definition, key features, specifications, applications, and a closer look at its manufacturer.
Catalog
The DTA114YM3T5G is a PNP transistor that belongs to the category of digital transistors with integrated resistors. It is engineered to provide efficient switching and amplification in low-voltage electronic circuits. Manufactured by onsemi, this transistor ensures reliable operation across a wide temperature range, from -55°C to 150°C. Its compact SOT-723 package makes it suitable for automated assembly using tape and reel packaging.
Let's delve into the standout features that make the DTA114YM3T5G a standout in the world of electronics:
· The DTA114YM3T5G supports a maximum collector-emitter voltage of 50V.
· It can handle a continuous DC collector current of up to 0.1A.
· The transistor delivers a minimum DC current gain of 80 at 5mA and 10V.
· It includes a typical input resistor of 10 kΩ.
· The device offers a typical resistor ratio of 0.21.
· It has a maximum collector-emitter saturation voltage of 0.25V at 0.3mA–10mA.
· The maximum power dissipation is rated at 600 mW.
· It operates reliably from -55°C to 150°C, supporting extreme temperature conditions.
· The transistor comes in a tape-and-reel package for automated assembly.
· It features a flat lead shape with three pins for easy surface mounting.
· Its small dimensions are 1.2 mm length, 0.8 mm width, and 0.5 mm height.
Now, let's take a closer look at the technical specifications that define the capabilities of the DTA114YM3T5G:
Type | Parameter |
Type | PNP |
Configuration | Single |
Maximum Collector-Emitter Voltage (V) | 50 |
Maximum Continuous DC Collector Current (mA) | 0.1 |
Minimum DC Current Gain | 80@5mA@10V |
Typical Input Resistor (kohm) | 10 |
Typical Resistor Ratio | 0.21 |
Maximum Collector-Emitter Saturation Voltage (V) | 0.25@0.3mA@10mA |
Maximum Power Dissipation (mW) | 600 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Packaging | Tape and Reel |
Mounting | Surface Mount |
Package Height | 0.5 |
Package Width | 0.8 |
Package Length | 1.2 |
PCB changed | 3 |
Standard Package Name | SOT |
Supplier Package | SOT-723 |
Pin Count | 3 |
Lead Shape | Flat |
The DTA114YM3T5G transistor is ideal for various applications including:
· Low-power switching circuits.
· Signal amplification in small electronic devices.
· Surface-mount PCB designs where space is limited.
· Temperature-sensitive electronics operating in extreme conditions.
· Consumer electronics such as portable sensors, meters, and communication devices.
ON Semiconductor, stylized in lowercase as "onsemi", stands at the forefront of technological innovation, driving advancements that power intelligent and energy-efficient systems worldwide. With a commitment to delivering cutting-edge solutions, ON Semiconductor provides a comprehensive portfolio of semiconductor products, spanning power management, analog, sensor, and connectivity solutions. Leveraging a legacy of over 20 years, the company has solidified its position as a trusted partner for industries ranging from automotive and industrial to consumer electronics and healthcare.
The onsemi DTA114YM3T5G is a robust, reliable, and compact PNP BJT transistor. Its low-power handling, wide temperature range, and surface-mount packaging make it ideal for modern electronics applications. Engineers benefit from its high gain, low saturation voltage, and ease of integration into dense circuits. Whether used for switching, amplification, or signal processing, this transistor delivers consistent performance and durability.