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000IPB017N10N5LFATMA1: Features, Specs & More
Welcome to the realm of power MOSFETs, where efficiency meets innovation. In this comprehensive article, we'll delve into the intricacies of the IPB017N10N5LFATMA1, uncovering its definition, key features, specifications, applications, and a closer look at its manufacturer.
IPB017N10N5LFATMA1's Overview
The Infineon Technologies IPB017N10N5LFATMA1 is a Trans MOSFET, boasting a N-CH configuration with an impressive maximum drain source voltage of 100V and a staggering maximum continuous drain current of 256A. In simpler terms, this MOSFET serves as a powerful switch, allowing or preventing the flow of current within your circuitry. Its robust design and high-performance specifications make it a go-to choice for applications demanding reliability and efficiency.
Key Features
Let's delve into the standout features that make IPB017N10N5LFATMA1 a game-changer:
· With a maximum continuous drain current of 256A and a maximum drain-source voltage of 100V, this MOSFET is suitable for high-power applications.
· Boasting a drain-source resistance of 1.7mΩ at 10V, the IPB017N10N5LFATMA1 minimizes power losses and ensures efficient operation.
· Featuring rapid switching times with typical rise and fall times of 28ns and a turn-on delay time of 7ns, this MOSFET facilitates swift and precise control in switching applications.
· From -55°C to 150°C, the IPB017N10N5LFATMA1 maintains stable performance across various operating conditions.
· Packaged in a TO-263 D2PAK format with seven pins, this MOSFET offers ease of installation and durability in diverse environments.
Specifications
Now, let's delve into the technical specifications that make the IPB017N10N5LFATMA1 a standout choice for electronic projects:
Type | Parameter |
Product Category | Power MOSFET |
Configuration | Single Quint Source |
Channel Mode | Enhancement |
Channel Type | N |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 100 |
Maximum Gate Source Voltage (V) | 20 |
Maximum Continuous Drain Current (A) | 256 |
Maximum Drain Source Resistance (MOhm) | 1.7@10V |
Typical Gate Charge @ Vgs (nC) | 195@10V |
Typical Gate Charge @ 10V (nC) | 195 |
Typical Input Capacitance @ Vds (pF) | 650@50V |
Maximum Power Dissipation (mW) | 313000 |
Typical Fall Time (ns) | 82 |
Typical Rise Time (ns) | 28 |
Typical Turn-Off Delay Time (ns) | 28 |
Typical Turn-On Delay Time (ns) | 7 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Packaging | Tape and Reel |
Mounting | Surface Mount |
Package Height | 4.4 |
Package Width | 9.25 |
Package Length | 10 |
PCB changed | 6 |
Tab | Tab |
Standard Package Name | TO-263 |
Supplier Package | D2PAK |
Pin Count | 7 |
Applications
The Infineon Technologies IPB017N10N5LFATMA1 finds its application in various electronic systems, including but not limited to:
· Power Supplies: In both linear and switching power supplies, the IPB017N10N5LFATMA1 facilitates efficient power management and regulation.
· Motor Control: From industrial machinery to automotive systems, this MOSFET plays a crucial role in motor control applications, ensuring smooth operation and precise control.
· Inverters: In renewable energy systems, such as solar inverters and wind turbines, the IPB017N10N5LFATMA1 enables efficient energy conversion and management.
· Audio Amplifiers: With its high current and voltage ratings, this MOSFET is ideal for audio amplifier circuits, delivering clean and powerful sound output.
· LED Lighting: In LED drivers and lighting systems, the IPB017N10N5LFATMA1 offers efficient switching and dimming capabilities, enhancing energy efficiency and longevity.
IPB017N10N5LFATMA1's Manufacturer
Established in 1999, Infineon Technologies has emerged as a global leader in semiconductor solutions, pioneering innovations that power various industries worldwide. Headquartered in Neubiberg, Germany, the company has played a pivotal role in shaping the landscape of modern electronics. Infineon specializes in designing and manufacturing advanced semiconductor technologies, encompassing power management, automotive electronics, industrial applications, and security solutions.
Conclusion
In conclusion, the Infineon Technologies IPB017N10N5LFATMA1 stands as a testament to innovation and excellence in power MOSFET technology. With its robust features, specifications, and versatile applications, this MOSFET caters to the evolving needs of the electronics industry, delivering efficiency, reliability, and performance.
