In the rapidly evolving world of high-frequency electronics, reliability and efficiency are key. Whether you're designing RF amplifiers for telecom or pushing performance in industrial wireless systems, choosing the right RF transistor can make or break your design. That’s where the STMicroelectronics PD55003-E comes into play. In this comprehensive article, we'll delve into the intricacies of the PD55003-E, uncovering its definition, key features, specifications, applications, and a closer look at its manufacturer.
Catalog
The PD55003-E is a high-performance N-channel RF Power MOSFET from STMicroelectronics, leveraging LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology. This component is designed for enhancement mode operation, which means it remains off at zero gate voltage and conducts when a positive voltage is applied.
It is optimized for RF power amplification in systems operating up to 1 GHz, making it ideal for use in professional RF communication systems, broadcast transmitters, and other high-frequency industrial applications.
Let's delve into the standout features that make the PD55003-E a standout in the world of electronics:
· N-channel enhancement-mode transistor designed for RF applications.
· 40V maximum drain-source voltage ensures reliable operation under load.
· ±20V gate-source voltage rating offers design flexibility in driving circuits.
· Continuous drain current of 2.5A, enabling solid RF output power.
· High drain efficiency of 52%, helping reduce energy waste and heat generation.
· Power output of 3W (minimum), suitable for moderate to high RF power applications.
· 17dB power gain, delivering strong signal amplification.
· Supports operation up to 1000 MHz, fitting well into a variety of VHF and UHF systems.
· Low input and output capacitance, ideal for high-frequency circuit stability.
· Surface mount package (PowerSO-10RF) with formed gull-wing leads for easy PCB integration.
· Industrial-grade temperature tolerance from -65°C to +165°C, suitable for rugged environments.
Now, let's take a closer look at the technical specifications that define the capabilities of the PD55003-E:
Type | Parameter |
Configuration | Single |
Channel Mode | Enhancement |
Channel Type | N |
Number of Elements per Chip | 1 |
Process Technology | LDMOS |
Maximum Drain Source Voltage (V) | 40 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum VSWR | 20(Min) |
Maximum Continuous Drain Current (A) | 2.5 |
Typical Input Capacitance @ Vds (pF) | 36@12.5V |
Typical Reverse Transfer Capacitance @ Vds (pF) | 2.4@12.5V |
Typical Output Capacitance @ Vds (pF) | 24@12.5V |
Typical Forward Transconductance (S) | 1 |
Maximum Power Dissipation (mW) | 31700 |
Output Power (W) | 3(Min) |
Typical Power Gain (dB) | 17 |
Maximum Frequency (MHz) | 1000 |
Typical Drain Efficiency (%) | 52 |
Minimum Operating Temperature (°C) | -65 |
Maximum Operating Temperature (°C) | 165 |
Packaging | Tube |
Supplier Temperature Grade | Industrial |
Mounting | Surface Mount |
Package Height | 3.5 |
Package Width | 9.4 |
Package Length | 9.5 |
PCB changed | 3 |
Supplier Package | PowerSO-10RF (Formed lead) |
Pin Count | 3 |
Lead Shape | Gull-wing |
The PD55003-E is engineered for RF amplification in medium-power applications. Common use cases include:
· Industrial RF amplifiers
· Telecom transmission equipment
· Broadcast RF systems
· High-efficiency signal boosters
· ISM band transmitters (Industrial, Scientific, and Medical)
· RF communication modules for defense or aviation
STMicroelectronics, often abbreviated as ST, is a global semiconductor manufacturer with a long-standing reputation for producing innovative and high-quality electronic components. With headquarters in Geneva, Switzerland, and a strong international presence, STMicroelectronics is a leading player in the semiconductor industry. They specialize in designing and manufacturing a wide range of semiconductor devices, including microcontrollers, sensors, power management solutions, and more. STMicroelectronics is trusted by industries worldwide, including automotive, consumer electronics, industrial, and telecommunications, for their cutting-edge technology and commitment to advancing the field of electronics.
The STMicroelectronics PD55003-E is more than just a transistor—it's a strategic solution for high-frequency designs that demand stability, efficiency, and power. Its LDMOS technology provides the ruggedness and linearity needed for reliable RF amplification. For engineers focused on building durable, energy-efficient, and compact RF systems, this MOSFET offers the right balance of performance and footprint.