IRF6643TRPBF: Features, Specs & More
If you're exploring reliable power MOSFET options for your electronics projects, the Infineon IRF6643TRPBF stands out as a high-performance component. Designed with advanced DirectFET technology, this N-channel MOSFET offers robust power handling and efficiency suitable for a variety of applications. In this comprehensive article, we'll delve into the intricacies of the IRF6643TRPBF, uncovering its definition, key features, specifications, applications, and a closer look at its manufacturer.
Catalog
IRF6643TRPBF's Overview
The IRF6643TRPBF is a N-channel power MOSFET manufactured by Infineon Technologies. It belongs to the category of enhancement-mode transistors optimized for switching and power management. With a maximum drain-source voltage of 150V and continuous drain current rating of 6.2A, this MOSFET is engineered for efficient conduction with low on-resistance. The device uses silicon (Si) material and incorporates DirectFET packaging, a method that minimizes parasitic inductance and improves thermal performance.
Key Features
Let's delve into the standout features that make the IRF6643TRPBF a standout in the world of electronics:
· It supports a maximum drain-source voltage of 150V.
· The MOSFET handles a continuous drain current of 6.2A.
· It features a maximum drain-source resistance of 34.5 milliohms at 10V gate drive.
· The gate charge is optimized at 39 nC with a gate voltage of 10V.
· Typical input capacitance measures 2340 pF at 25V drain-source voltage.
· It offers fast switching with a typical fall time of 4.4 nanoseconds.
· Rise time is approximately 5 nanoseconds, enhancing switching efficiency.
· Turn-off delay time is about 13 nanoseconds, while turn-on delay time is 9.2 nanoseconds.
· The device operates reliably between -40°C to 150°C ambient temperatures.
· It comes in a 7-pin DirectFET MZ package designed for surface mounting.
Specifications
Now, let's take a closer look at the technical specifications that define the capabilities of the IRF6643TRPBF:
Type | Parameter |
Product Category | Power MOSFET |
Material | Si |
Configuration | Single Quad Drain Dual Source |
Process Technology | DirectFET |
Channel Mode | Enhancement |
Channel Type | N |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 150 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Continuous Drain Current (A) | 6.2 |
Maximum Drain Source Resistance (MOhm) | 34.5@10V |
Typical Gate Charge @ Vgs (nC) | 39@10V |
Typical Gate Charge @ 10V (nC) | 39 |
Typical Input Capacitance @ Vds (pF) | 2340@25V |
Maximum Power Dissipation (mW) | 2800 |
Typical Fall Time (ns) | 4.4 |
Typical Rise Time (ns) | 5 |
Typical Turn-Off Delay Time (ns) | 13 |
Typical Turn-On Delay Time (ns) | 9.2 |
Minimum Operating Temperature (°C) | -40 |
Maximum Operating Temperature (°C) | 150 |
Packaging | Tape and Reel |
Mounting | Surface Mount |
Package Height | 0.53(Max) mm |
Package Width | 5.05(Max) mm |
Package Length | 5.45(Max) mm |
PCB changed | 7 |
Standard Package Name | Direct-FET |
Supplier Package | Direct-FET MZ |
Pin Count | 7 |
Lead Shape | No Lead |
Applications
The IRF6643TRPBF's specifications make it highly suitable for:
· Power management circuits in industrial electronics.
· Switching regulators and DC-DC converters.
· Load switching in automotive and consumer devices.
· Motor control applications requiring efficient MOSFETs.
· Battery-powered systems with strict efficiency needs.
· High-frequency switching applications demanding fast response times.
IRF6643TRPBF's Manufacturer
Established in 1999, Infineon Technologies has emerged as a global leader in semiconductor solutions, pioneering innovations that power various industries worldwide. Headquartered in Neubiberg, Germany, the company has played a pivotal role in shaping the landscape of modern electronics. Infineon specializes in designing and manufacturing advanced semiconductor technologies, encompassing power management, automotive electronics, industrial applications, and security solutions.
Conclusion
The Infineon IRF6643TRPBF power MOSFET is a reliable and efficient component for modern electronic designs. Its combination of high voltage rating, low on-resistance, and fast switching times meets the demands of power-sensitive applications. The DirectFET package ensures compactness and enhanced thermal management, making it a smart choice for engineers looking to optimize performance and reliability. Whether you are designing industrial controls or automotive electronics, the IRF6643TRPBF delivers excellent value and proven Infineon quality.
