MMBTA64LT1G: Features, Specs & More
When you need ultra-high gain in a small footprint without compromising stability, the ON Semiconductor MMBTA64LT1G stands out as a practical and highly efficient solution. This PNP Darlington transistor is engineered for designers who want strong signal amplification and reliable switching in space-constrained electronic systems. In this comprehensive article, we'll delve into the intricacies of the MMBTA64LT1G, uncovering its definition, key features, specifications, applications, and a closer look at its manufacturer.
Catalog
MMBTA64LT1G's Overview
The MMBTA64LT1G is a PNP Darlington transistor manufactured by onsemi and optimized for surface-mount applications that demand exceptionally high current gain. It combines two bipolar junction transistors internally, providing enhanced amplification compared to standard PNP transistors. This configuration allows small base currents to control much larger collector currents, making the device ideal for signal amplification, logic control, and driver circuits where efficiency matters.
Key Features
Let's delve into the standout features that make the MMBTA64LT1G a standout in the world of electronics:
· The MMBTA64LT1G supports a maximum collector-emitter voltage of 30V.
· It can handle a maximum continuous collector current of 0.5A.
· The transistor features a maximum power dissipation of 300mW.
· It has a typical current gain bandwidth of at least 125MHz.
· The device offers a minimum DC current gain of 10,000 at 10mA.
· It supports a wide operating temperature range from -55°C to 150°C.
· The package is SOT-23 with 3 pins and gull-wing leads for surface mounting.
· Tape and reel packaging ensures compatibility with automated assembly lines.
· The maximum collector-emitter saturation voltage is only 1.5V at 0.1mA to 100mA.
Specifications
Now, let's take a closer look at the technical specifications that define the capabilities of the MMBTA64LT1G:
Type | Parameter |
Type | PNP |
Configuration | Single |
Number of Elements per Chip | 1 |
Maximum Collector-Emitter Voltage (V) | 30 |
Maximum Collector Base Voltage (V) | 30 |
Maximum Emitter Base Voltage (V) | 10 |
Maximum Continuous DC Collector Current (A) | 0.5 |
Maximum Collector Cut-Off Current (uA) | 0.1 |
Typical Current Gain Bandwidth (MHz) | 125(Min) |
Maximum Collector-Emitter Saturation Voltage (V) | 1.5@0.1mA@100mA |
Minimum DC Current Gain | 10000@10mA@5V|20000@100mA@5V |
Maximum Power Dissipation (mW) | 300 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Packaging | Tape and Reel |
Mounting | Surface Mount |
Package Height | 0.94 |
Package Width | 1.3 |
Package Length | 2.9 |
PCB changed | 3 |
Standard Package Name | SOT |
Supplier Package | SOT-23 |
Pin Count | 3 |
Lead Shape | Gull-wing |
Applications
The MMBTA64LT1G is widely used in circuits that require high gain with minimal control current.
· Low-power relay drivers
· Signal amplification stages
· Industrial control systems
· Logic-level switching circuits
· Audio pre-amplification blocks
· Battery-powered electronics
· Microcontroller output buffering
· Portable devices with strict space constraints
This transistor is especially useful in designs where the control signal is very weak and requires massive amplification before driving a load.
MMBTA64LT1G's Manufacturer
ON Semiconductor, stylized in lowercase as "onsemi", stands at the forefront of technological innovation, driving advancements that power intelligent and energy-efficient systems worldwide. With a commitment to delivering cutting-edge solutions, ON Semiconductor provides a comprehensive portfolio of semiconductor products, spanning power management, analog, sensor, and connectivity solutions. Leveraging a legacy of over 20 years, the company has solidified its position as a trusted partner for industries ranging from automotive and industrial to consumer electronics and healthcare.
Conclusion
The Onsemi MMBTA64LT1G is a versatile and reliable PNP Darlington transistor. Its high gain, low saturation voltage, and surface-mount design make it suitable for a wide range of electronic applications. Whether used in switching circuits, amplifiers, or signal drivers, it provides engineers with a compact and high-performance solution.
